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Feedback Questions about Polishing Powder Silicon Carbide

SiC High Purity Powder 99.9% Silicon Carbide for RD Ultrafine Nano 1pc Grit 320-10000 W0.5-W40 Diamond Abrasive Paste For Jade Agate

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A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically

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US6902964B2 - Methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess

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An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon

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The hybrid well region may include an implanted p-type silicon carbide well In the drawings and specification, there have been disclosed typical

- Method for growing single crystal of silicon carbide -

In feeding a silicon carbide-forming gas generated by a method of heat-subliming silicon carbide or the like to the surface of a seed crystal (2) so

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industry, engaged in the production of silicon carbide]

[Status of the upper respiratory tract of workers in the abrasive industry, engaged in the production of silicon carbide]

of aluminum nitride: silicon carbide alloys - Google Patents

Bulk, low impurity aluminum nitride:silicon carbide (AlN:SiC) alloy single crystals are grown by deposition of vapor species containing Al, Si, N and C

Silicon Carbide in the CIS: Production, Market and Forecast

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US6514779B1 - Large area silicon carbide devices and

A silicon carbide device is fabricated by forming a plurality of a same type of silicon carbide devices on at least a portion of a silicon carbide

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ABRASIVE PARTICLE INCLUDING SILICON CARBIDE AND AN

and unagglomerated abrasive particles comprising silicon carbide (SiC) contained within the bond material and present in an amount of greater than

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