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from Silicon carbide tetrapods (1407.7628) - ScienceWISE

In this letter we demonstrate a previously unknown quantum system namely silicon carbide tetrapods. The tetrapods have a cubic polytype core (3C) and

Graphene on Silicon Carbide (1109.6907) - ScienceWISE

We explain the robust p-type doping observed for quasi-free standing graphene on hexagonal silicon carbide by the spontaneous polarization of the substrate

Silicon Carbide - zhoucunlumeng

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TRUE GRIT Email Texas octogenarian “Tiny” Leach is a wise-cracking treasure trove of entertaining stories who during a Forrest Gump-type life helped

Wet Oxidation for Silicon Carbide (1204.5556) - ScienceWISE

be the intrinsic origin of negative fixed charge in SiC thermal oxidation. © 2009-2018 ScienceWISE project | About | FAQ | Contact us |

metal spins in silicon carbide (1802.06714) - ScienceWISE

LasersExcited stateCarbidePhononDiamondNitrogen vacancyDephasing timeQuantum © 2009-2018 ScienceWISE project | About | FAQ | Contact us |

boron-doped silicon carbide (0810.0056) - ScienceWISE

(C:B) in 2004 and silicon (Si:B) in 2006 renew the interest in the SuperconductivitySuperconductorSupercoolingCarbideSemiconductorCritical temperaturePhase

The application of polycrystalline diamond (PCD) tool

silicon alloys containing 7% and 13% silicon andthe abrasive nature of the (SiC) reinforcement. D.K.Aspinwall and L.H.Wise, The application

graphitic silicon carbide (1205.5404) - ScienceWISE

silicon carbide (GSiC), in particular monolayer type of light-emitting diodes utilizing its unique© 2009-2018 ScienceWISE project | About |

of a silicon carbide color center (1609.03918) - ScienceWISE

ScienceWISE Ontology Bookmarks New articles News IntroductionLoginRegisterPoint defects in silicon carbide are rapidly becoming a platform of great

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Porous silicon carbide and aluminum oxide with unidirectional

ScienceWISE Ontology Bookmarks New articles News IntroductionNew silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor

ANSI B74.12 -

Grit size ranging from 2 mm (the large grain) (about F 10 using FEPA Steel abrasive Silicon carbide (carborundum) Zirconia alumina Boron carbide Slags

Room-temperature near-infrared silicon carbide

Bulk silicon carbide (SiC) is a very promising material system for bio-© 2009-2018 ScienceWISE project | About | FAQ | Contact us |

Silicon single crystal wafer annealing method and equipment,

bulk micro defect (BMD) for the provision of silicon carbide (SiC) or quartz, making it surface layers of the wafers inward (depth-wise)

High yield silicon carbide pre-ceramic polymers

Pre-polymers which are aminated methylpolysilanes are useful for the preparation of fine grained silicon carbide ceramic materials and silicon carbide-

of silicon carbide nanowires (0904.2421) - ScienceWISE

The energetic stability and electronic properties of hydrogenated silicon carbide  nanowires (SiCNWs) with zinc blende (3C) and wurtzite (2H) structures

of laser-induced heating effects in free-standing silicon

to the bulk value of ω0 = 520.5 cm−1.silicon carbide (a-SiC:H) matrix; Si NCs in W. Wise, Nat. Nanotech- nol., 2012, 7,

Optical constants of silicon carbide for astrophysical

ScienceWISE Ontology Bookmarks New articles News silicon carbide (SiC) are presented from 1200--grainsFull width at half maximumTransmittanceSpectral

and Silicon Carbide nanotubes (1708.03459) - ScienceWISE

silicon carbide nanotubes, as useful membranes forIn order that studies on different types of © 2009-2018 ScienceWISE project | About |

Silicon Carbide Photonic Crystal Cavities with Integrated

silicon carbide (SiC) similar to the negatively charged nitrogen vacancy © 2009-2018 ScienceWISE project | About | FAQ | Contact us |

anticrossing in silicon carbide (1609.06451) - ScienceWISE

ScienceWISE Ontology Bookmarks New articles News silicon vacancy centers in 4H silicon carbide. type control of spin qubits in silicon carbide

The case of silicon carbide (1805.00557) - ScienceWISE

in a semiconductor material of great technological interest: silicon carbide. © 2009-2018 ScienceWISE project | About | FAQ | Contact us |

vacancies in silicon carbide (1707.02715) - ScienceWISE

the silicon vacancy defects in the 4H polytype of silicon carbide (SiC).© 2009-2018 ScienceWISE project | About | FAQ | Contact us |

SiCILIA—Silicon Carbide Detectors for Intense Luminosity

Silicon carbide (SiC) is a compound semiconductor, which is considered as© 2009-2018 ScienceWISE project | About | FAQ | Contact us |

in irradiated silicon carbide (0709.1402) - ScienceWISE

Theoretical study of the recombination of Frenkel pairs in irradiated silicon carbide Guillaume Lucas, Laurent Pizzagalli Materials Science The recombinatio

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