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polished silicon carbide wafers

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SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME An SiC semiconductor device includes a substrate, a drift layer, a base region, a

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Formation of ohmic contact on bulk cubic silicon carbide

The research in silicon carbide (SiC) material has increased drastically in These properties make it a promising substrate for a number of applications:

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cond-mat in arxiv

silicon carbide (SiC) metal-oxide-semiconductor ( we find that an impurity-boson contact to the radial and azimuthal quantum number

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Silicon carbide single crystal and method and apparatus for

A method of producing a silicon carbide single crystal in which a sublimation raw materialis accommodated at the side of vessel bodyin a graphite

Conductance signal from near-interface traps in n-

Science Institute, University of Iceland, IS-107 Reykjavik, IcelandEuropean Conference on Silicon Carbide Related Materials

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

contact with each other, and a step of performing an activation heat treatment on the silicon carbide substrate using the carbon film as a protective

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